डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC4655 | NPN TRANSISTOR Transistor
2SC4655
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
1.6±0.15
s Features
q q
0.4
0.8±0.1
0.4
0.2–0.05 0.15–0.05
+0.1
Optimum for RF amplification, oscillati |
Panasonic Semiconductor |
|
2SC4655G | Silicon NPN Transistor Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4655G
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
■ Package
• Optimum for RF amplific |
Panasonic |
|
2SC4655J | Silicon NPN Transistor Transistors
2SC4655J
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features • Optimum for RF amplification, oscillation, mixing, and IF of
1.60+–00..0035 1.00±0.05
3
0.80±0.05
|
Panasonic |
www.DataSheet.in | 2017 | संपर्क |