2SC4627 डाटा शीट PDF( Datasheet )

Production specification NPN High-frequency Transistor FEATURES  Optimum for RF amplification of FM/AM radios. Pb Lead-free  High requency voltage fT.  SS-Mini type package,allowing downsizing of

Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 s Features q q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 Optimum for RF amplification of FM/AM

Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4627G Silicon NPN epitaxial planar type For high-frequency amplification ■ Features ■ Package • Optimum for RF amplific

Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4627J Silicon NPN epitaxial planar type 0.80±0.05 For high-frequency amplification 1.60+–00..0035 1.00±0.05 Unit: mm 0.12