डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3669 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3669
Power Amplifier Applications Power Switching Applications
2SC3669
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC |
Toshiba Semiconductor |
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2SC3669 | NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SC3669
NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
FEATURES
* Low saturation voltage VCE(SAT)=0.5V (Max.)
* High speed swit |
UTC |
www.DataSheet.in | 2017 | संपर्क |