2SC3507 डाटा शीट PDF( Datasheet )

Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 15.0±0.3 5.0±0.2 (0.7) ■ Features 11.0±0.2 (3.2) • High-speed switchin

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable op

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3507 DESCRIPTION ·With TO-3PFa package ·High-speed switching ·High collector-base voltage VCBO ·Satisfac