2SC3326 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications 2SC3326 Unit: mm  AEC-Q101 Qualified (Note1).  High emitter-base voltage: VEBO = 25 V  High r

SMD Type Silicon NPN Epitaxial 2SC3326 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -

2SC3326 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features 高 VEBO，高 hFE。 High emitt