डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3326 | Silicon NPN Transistor TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3326
For Muting and Switching Applications
2SC3326
Unit: mm
AEC-Q101 Qualified (Note1). High emitter-base voltage: VEBO = 25 V High r |
Toshiba Semiconductor |
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2SC3326 | Silicon NPN Transistor SMD Type
Silicon NPN Epitaxial 2SC3326
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = - |
Kexin |
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2SC3326 | Silicon NPN transistor 2SC3326
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
高 VEBO,高 hFE。 High emitt |
BLUE ROCKET ELECTRONICS |
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