डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3306 | NPN Transistor |
Toshiba Semiconductor |
|
2SC3306 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3306
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot var |
INCHANGE |
|
2SC3306 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3P(I) package ·Collector-emitter sustaining voltageVCEO(sus)=400V(Min) ·Fast switching ti |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |