डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3299 | Silicon NPN Transistor :h
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm
FEATURES . Low Collector Saturation Voltage
: VcE(sat)=0.4V(Max.) at Ic=3A , High Speed Switching Time : t st g=l . |
Toshiba |
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2SC3299 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3299
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 50V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1307 ·Minimum Lot-to-Lot |
INCHANGE |
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2SC3299 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC3299
DESCRIPTION ·With TO-220Fa package ·Complement to type 2SA1307 ·Low saturation voltage ·High speed |
SavantIC |
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