2SC3298 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SC3298 | Silicon NPN Transistor :
2SC3298 2SC3298A 2SC3298B
)
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES
.
High Transition Frequency
:
fT=100MHz
(Typ .
. Compl |
 Toshiba |
|
| 2SC3298 | NPN Transistor isc Silicon NPN Power Transistors
2SC3298/A/B
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B
·Complement |
 INCHANGE |
|
| 2SC3298A | Silicon NPN Transistor :
2SC3298 2SC3298A 2SC3298B
)
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES
.
High Transition Frequency
:
fT=100MHz
(Typ .
. Compl |
Toshiba |
|
| 2SC3298A | NPN Transistor isc Silicon NPN Power Transistors
2SC3298/A/B
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B
·Complement |
INCHANGE |
|
| 2SC3298B | Silicon NPN Transistor |
 Toshiba Semiconductor |
|
| 2SC3298B | COMPLEMENTARY SILICON POWER TRANSISTORS |
 Motorola |
|
| 2SC3298B | NPN Transistor isc Silicon NPN Power Transistors
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 200V(Min) ·Complement to Type 2SA1306B ·Minimum Lot-to-Lot variations for robust de |
INCHANGE |
शेयर लिंक :
[1]
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