डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3112 | TRANSISTOR 2SC3112
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3112
For Audio Amplifier and Switching Applications
• • • High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V H |
Toshiba Semiconductor |
|
2SC3112 | TRANSISTOR | Toshiba Semiconductor |
|
2SC3110 | Silicon Power Transistor | Inchange |
|
2SC3114 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
|
2SC3117 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
|
2SC3117 | SILICON POWER TRANSISTOR | SavantIC |
|
2SC3116 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
|
2SC3113 | Silicon NPN Transistor | Toshiba Semiconductor |
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