डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3076 | Silicon NPN Transistor TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3076
Power Amplifier Applications Power Switching Applications
2SC3076
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC |
Toshiba Semiconductor |
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2SC3076 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3076
DESCRIPTION ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V (Max.)@ IC= 1A ·Complementary to 2SA1241 ·100% tested ·Minimum Lot-to-Lo |
INCHANGE |
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2SC3076 | Silicon NPN Transistor SMD Type
Silicon NPN Epitaxial 2SC3076
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A) Excellent Switching Time :tstg=1.0ìs(Typ |
Kexin |
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