2SC3074 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High spe

isc Silicon NPN Power Transistor 2SC3074 DESCRIPTION ·With TO-251(IPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SA1244

isc Silicon NPN Power Transistor 2SC3074 DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SA1244

SMD Type Silicon NPN Epitaxial 2SC3074 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector saturation voltage. High speed switching time. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0