डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3039 | NPN Triple Diffused Planar Silicon Transistor |
Sanyo Semicon Device |
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2SC3039 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
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INCHANGE |
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2SC3039 | Silicon NPN Power Transistors SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3039
DESCRIPTION ·With TO-220C package ·High breakdown voltage (VCBO 500V). ·Fast switching speed. ·Wide area of safe operatio |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |