2SC2983 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications 2SC2983 Unit: mm • High transition frequency: fT = 100 MHz (typ.) • Com

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

Silicon NPN Epitaxial Type FEATURES  High transition frequency:fT=100MHz(typ).  Complementary to 2SA1225. Pb Lead-free APPLICATIONS  Power Amplifier Applications.  Driver Stage Amplifier Appli

SMD Type NPN Silicon Epitaxial Transistor 2SC2983 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High Transiton Frequency: Ft=100MHz(TYP.) +0.2 9.70 -0.2 6.50 +0.2 5.30-0

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Low Collector Saturation Voltage x Execllent

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Low Collector Saturation Voltage x Execllent