2SC2715 डाटा शीट PDF( Datasheet )

2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequency Amplifier Applications Unit: mm · High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) · Recommended for FM IF,

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Power dissipation. Production specification 2SC2715 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications. S

SMD Type Silicon NPN Epitaxial 2SC2715 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz). Recommended for FM IF, OSC stage and A

2SC2715 Elektronische Bauelemente 0.05A , 35V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   SOT-23 A 3 3 High Power Gain Recom

2SC2715 TRANSISTOR (NPN) FEATURES SOT-23 1. BASE z z High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage. 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbo

Silicon Epitaxial Planar Transistor FEATURES z High power gain z Recommended for FM IF,OSC stage and AM CONV.IF stage Pb Lead-free APPLICATIONS z High Frequency Amplifier Applications Production specificati

2SC2715 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features 功率增益高，用于调频�