डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC2669 | TRANSISTOR 2SC2669
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2669
High Frequency Amplifier Applications
Unit: mm
· High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) · Recommended for FM IF |
Toshiba Semiconductor |
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2SC2668 | Silicon NPN Transistor | Toshiba Semiconductor |
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2SC2669 | TRANSISTOR | Toshiba Semiconductor |
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2SC2665 | Silicon NPN Power Transistor | Inchange Semiconductor |
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2SC2668 | NPN Transistor | GD electronics |
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2SC2660 | SILICON POWER TRANSISTOR | SavantIC |
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2SC2668 | NPN Plastic-Encapsulated Transistor | SeCoS |
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2SC2668 | NPN Silicon Epitaxial Planar Transistor | SEMTECH |
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2SC2668-Y | NPN Plastic-Encapsulate Transistors | MCC |
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2SC2668-R | NPN Plastic-Encapsulate Transistors | MCC |
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2SC2668 | Silicon NPN transistor | BLUE ROCKET ELECTRONICS |
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