डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC2655 | Silicon NPN TRANSISTOR 2SC2655
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2655
Power Amplifier Applications Power Switching Applications
Industrial Applications Unit: mm
• Low saturation voltage: VCE (sat) = |
Toshiba Semiconductor |
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2SC2655 | NPN Transistor isc Silicon NPN Pow Transistor
DESCRIPTION ·Silicon NPN epitaxial type ·Low saturation voltage ·Complementary to 2SA1020 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance |
INCHANGE |
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2SC2655 | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SC2655
NPN SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
FEATURES
* Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching ti |
UTC |
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2SC2655 | NPN Transistor 2SC2655
Elektronische Bauelemente 2A , 50V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92MOD
A D
Low saturation volt |
SeCoS |
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2SC2655L | NPN Transistor Elektronische Bauelemente
2SC2655L
2A , 50V P Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Low saturation voltage:VCE(sat)=0.5V(Max)(IC |
SeCoS |
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