डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC2510 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2510
2SC2510
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE)
l Specified 28V, 28MHz Characteristics
l Output Power
: Po = 15 |
Toshiba Semiconductor |
|
2SC2510 | Silicon NPN POWER TRANSISTOR HG Semiconductors
2SC2510HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Specified 28V, 28MHz Characteristics
Output Power
: Po = 150W PEP (Min.)
Power Gain
: Gp = 12.2dB (Min.)
Colle |
HGSemi |
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2SC2510A | Silicon NPN epitaxial planar type Transistor 2SC2510A
www.DataSheet4U.com
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2510A
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE)
Unit in mm z z z z z Specified 28V, 28MHz Ch |
Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |