2SC2216 डाटा शीट PDF( Datasheet )

2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm · High gain: Gpe = 33dB (typ.) (f = 45 MHz) · Good linearity of hFE.

1. BASE 2. EMITTER 3. COLLECTOR 2SC2216(NPN) TO-92 Bipolar Transistors TO-92 Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCB

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC2216 Features • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Volta

RoHS 2SC2216 2SC2216 FEATURES Power dissipation TRANSISTOR (NPN) TO—92 PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperatur

2SC2216(3DG2216) 用途:用于电视机末级图像中放。 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR Purpose: TV final picture IF amplifier applications. 特点:高增益,hFE 线性好。 Features:

2SC2216 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 0.05 A , 50 V NPN Plastic Encapsulated Transistor FEATURES  Amplifier dissipation NPN Silicon TO

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