2SC1623 डाटा शीट PDF( Datasheet )

DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • Hig

Production specification Silicon Epitaxial Planar Transistor FEATURES  High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA).  High Voltage:VCEO=50V.  MSL 1. APPLICATIONS Pb Lead-free  NPN Silico

UNISONIC TECHNOLOGIES CO., LTD 2SC1623 NPN SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD  DESCRIPTION The UTC 2SC1623 is a NPN silicon transistor using UTC

isc Silicon NPN Transistor INCHANGE Semiconductor 2SC1623 DESCRIPTION ·SOT-23 plastic-encapsulate transistors ·High DC current gain:hFE=200(TYP) @VCE = 6V, IC = 1mA ·High voltage ·Minimum Lot-to-Lot varia

2SC1623 Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Com

www.DataSheet4U.com 2SC1623 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Cur

Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 FEATURES Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 PCM: 200 mW (Tamb=25℃) 0.