2SB857 डाटा शीट PDF( Datasheet )

2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Ma

UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR  DESCRIPTION Low frequency power amplifier.  ORDERING INFORMATION Order Number Lead Free Halogen Free Package

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB857 2SB858 · DESCRIPTION ·With TO-220C package ·Complement to type 2SD1133/1134 APPLICATIONS ·Low freque

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitach

DC COMPONENTS CO., LTD. R 2SB857 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier. TO-220AB Pinning 1 = Base 2 = C

isc Silicon PNP Power Transistor 2SB857 DESCRIPTION ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD11

2SB857 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220 Plastic Package.  特征 / Features 与 2SD1133 互补。 complement