2SB798 डाटा शीट PDF( Datasheet )

PNP Epitaxial Planar Silicon Transistors FEATURES z Low collector-emitter saturation Pb Lead-free voltage VCE(sat).<-0.4V(IC=-0.1A,IB=-100mA) z Excellent DC Current Gain Linearity: HFE=100 TYP.(VCE=-1.0V

2SB798 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package.  特征 / Features 饱和压降低，极好的 hFE

UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Inte

SMD Type PNP Silicon Epitaxial Transistor 2SB798 Transistors Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE(sat)<-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Line