2SB686 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor 2SB686 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Complement to Type 2SD716 ·Minimum Lot-to-Lot variations for robust

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB686 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SD716 APPLICATIONS ·Power amplifier applicati

: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB686 POWER AMPLIFIER APPLICATIONS. 15.9MAX. Unit in mm 03.2±Q .2 FEATURES • Complementary to 2SD716. • Recommended for 30 ^ 35W High-Fidelity Audio F