2SB677 डाटा शीट PDF( Datasheet )

isc Silicon PNP Darlington Power Transistor 2SB677 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min) ·Low Collector-Emitter Saturati

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB677 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltag

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES: • High DC Current Gain : h FE =20