डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB675 | PNP Transistor isc Silicon PNP Darlington Power Transistor
2SB675
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage
: VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement to Type 2SD635 ·Minimu |
INCHANGE |
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2SB675 | Silicon PNP Transistor www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
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Toshiba |
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2SB675 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB675
DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltag |
SavantIC |
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