डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB673 | PNP Transistor isc Silicon PNP Darlington Power Transistor
2SB673
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -100V(Min) ·Low Collector Saturation Volt |
INCHANGE |
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2SB673 | Silicon PNP Transistor www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
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Toshiba |
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2SB673 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB673
DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltag |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |