2SB649 डाटा शीट PDF( Datasheet )

2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SB649, 2SB649A Absolute Maximum

2SB649(A) Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-126 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-126 Plastic Package.  特征 / Features 与 2SD669(A)互补。 Comple

2SB649/2SB649A(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 7.400 7.800 2.500 1.100 2.900 1.500 Features 3 2 1 3. BASE Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RA

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SB649 2SB649A DESCRIPTION ·With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High cur

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A PNP SILICON TRANSISTOR 1 SOT-89 1 TO-126 1

2SB649/2SB649A PNP Epitaxial Planar Transistors P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Em

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to