डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB595 | PNP Transistor isc Silicon PNP Power Transistor
2SB595
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -2.0(V)(Max)@IC= -4A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·Complement to Type 2SD525 |
INCHANGE |
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2SB595 | SILICON PNP TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES
• High Breakdown Voltage : VCEO=-100V • Low Collector-Emitter Saturation Voltage
: VCE(sat)=-2.0V(Max.) • Complement |
Toshiba |
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2SB595 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB595
DESCRIPTION ·With TO-220C package ·Complement to type 2SD525 ·High breakdown voltage :VCEO=-100V ·Lo |
SavantIC |
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