डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB1556 | TRANSISTOR |
Toshiba Semiconductor |
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2SB1556 | PNP Transistor isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·High DC Current Gain-
: hFE= 5000(Min)@IC= -7A ·Complement to Type 2SD2385 ·Minimum Lot |
INCHANGE |
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2SB1556 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1556
DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2385 ·High DC current gain ·Low collector s |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |