2SB1481 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications 2SB1481 Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) =

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) ·Low Collector Saturation V

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1481 DESCRIPTION ·With TO-220F package ·Complement to type 2SD2241 ·High DC current gain. ·Low saturatio