2SB1427 डाटा शीट PDF( Datasheet )

2SB1427 Middle Power Transistor (-20V, -2A) Parameter VCEO IC Value -20V -2A lFeatures 1)Low saturation voltage, 　VCE(sat):Max.-500mV at IC/IB=-1/-50mA. 2)Excellent DC current gain characteristics. lOutli

SMD Type Power Transistor 2SB1427 Transistors Features Low saturation voltage, typically VCE(sat) =-0.5V at IC/IB =-1A/-50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Param

P2SB1427W6 PNP Low Vce(sat) Transistor Voltage 20V Current 3A Features  Silicon PNP epitaxial type  Low Vce(sat) -0.2V(max)@Ic/Ib=-1.6A/-53mA  High collector current capability  Excellent DC c