2SB1275 डाटा शीट PDF( Datasheet )

2SB1275 PNP -1.5A -160V Middle Power Transistor Parameter VCEO IC Value -160V -1.5A lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage :　VCEO= -160V 4) Lead

isc Silicon PNP Power Transistor DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=-160V ·Complementary NPN types:2SD1918 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d

SMD Type Power Transistor 2SB1275 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage.(BVCEO = -160V) +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 Ty