2SB1260 डाटा शीट PDF( Datasheet )

2SB1260 / 2SB1181 PNP -1.0A -80V Middle Power Transistor Parameter VCEO IC Value -80V -1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2S

Power Transistor(-80V,-1A) FEATURES z High breakdown voltage and high current. BVCEO=-80V,IC=-1A z Good hFEVLinearity. z Low VCE(sat). z Complements the 2SD1898. Pb Lead-free APPLICATIONS z Epitaxial planar

Plastic-Encapsulate Transistors FEATURES • High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complements the 2SD1898. 2SB1260(PNP) Marking: ZL Maximum

WILLAS SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ 2SB1260 THRU FM1200-M+ Pb Free Product Features • Batch process design, exc

2SB1 260 TRANSISTOR(PNP) SOT-89-3L FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements the 2SD1898 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATING

SMD Type Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Transistors Absolute Max

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1260 TRANSISTOR (PNP) FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation v