2SB1198K डाटा शीट PDF( Datasheet )

Transistors Low-frequency Transistor (*80V, *0.5A) 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FSt

2SB1198K PNP Silicon Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A L 3 Top View General Purpose Transistor SC-59 Dim A B C D D Min 2.70 1.30 1.00 0.35 1.70

2SB1198K Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.  特征 / Features 击穿电压高，饱和压降

2SB1198K SOT-23-3L Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR Features — Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) — High breakdown voltage BVCEO=-80V — Complements the 2SD1782K MAXIMUM R

SMD Type Transistors PNP Transistors 2SB1198K ■ Features ● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-80V ● Complementary to 2SD1782K +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.

2SB1198K(3CG1198K) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途：用于一般中功率放大。 Purpose: Medium power amplifier applications. 特点:击穿电压高，饱和压降低,与 2SD1782K

2SB1198K FRA Power Transistor (-80V, -500mA) Parameter VCEO IC Value -80V -500mA lFeatures 1)Low VCE(sat) 　 VCE(sat)=-200mV(Typ.) 　 (IC/IB=-500mA/-50mA) 2)High breakdown voltage. 　 BVCEO=-80V 3)Complem