2SB1197 डाटा शीट PDF( Datasheet )

2SB1197 PNP General Purpose Transistors P b Lead(Pb)-Free Features: * High current capacity in compact package. * Epitaxial planar type. * We declare that the material of product compliance with RoHS requireme

Production specification Silicon Epitaxial Planar Transistor FEATURES z Small surface mounting type. z Corredtor peak current(Max.=1000mA). Pb Lead-free z Suitable for high packing density. z Low voltage(M

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BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z z z Small surface mounting type. Corredtor peak current(Max.=1000mA) Suitable for high packing density. Low voltage(Max.=40v) High satur

2SB1197 Elektronische Bauelemente -0.8 A, -40 V PNP Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Low VCE(sat).VCE(sat)≦-0.5V(IC / IB = -0.

2SB1 1 97 TRANSISTOR(PNP) SOT-23 Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. Complements the 2SD1781. z MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Sym

SMD Type SMD Type PNP Transistors 2SB1197 (2SB1197K) Transistors Features Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA . IC = -0.8A. PNP silicon transistor +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1