डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB1189 | Medium power transistor Medium power transistor(-80V,-0.7A)
FEATURES
High breakdown voltage,BVCEO=-80V, And high current,IC=-0.7A.
Complementary the 2SD1767.
Pb
Lead-free
Production specification
2SB1189
ORDERING INFORMATI |
GME |
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2SB1189 | Silicon PNP transistor 2SB1189
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package.
特征 / Features
饱和压降低,与 2SD1767 互� |
BLUE ROCKET ELECTRONICS |
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2SB1189 | PNP Transistor Plastic-Encapsulate Transistors
FEATURES
• High breakdown voltage • Complements to 2SD1767
2SB1189(PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Volt |
HOTTECH |
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2SB1189 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1189 TRANSISTOR (PNP)
SOT-89-3L
FEATURES z High breakdown voltage z Complements to 2SD1767
MAXIMUM RATINGS (Ta= |
JCET |
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2SB1189 | Medium power transistor Medium power transistor(80V, 0.7A)
2SB1189 / 2SB1238
Features 1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859.
Absolute maximum ratings |
ROHM |
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2SB1189 | Medium Power Transistor SMD Type
Medium Power Transistor 2SB1189
Transistors
Features
High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base Voltage Collector-emitt |
Kexin |
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2SB1189 | TRANSISTOR 2SB1 1 8 9
TRANSISTOR(PNP)
FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Col |
Jin Yu Semiconductor |
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