2SB1188 डाटा शीट PDF( Datasheet )

5.5+−00..31 1.5±0.3 0.9 1.5 2.5 9.5±0.5 Medium power transistor (32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements

2SB1188 2A General Purpose PNP Epitaxial Planar Transistor ■ Features • Low VCE(sat) VCE(sat) = -0.5V(Typ.) (IC/IB=-2A/-0.2A). • Complements 2SD1766. • Suffix "G" indicates Halogen-free part, ex.2SB118

Production specification Medium power transistor FEATURES z Low VCE(SAT)=-0.5V(Typ.) (IC/IB=-1.5A/-0.15A). z Complementary the 2SD1766. Pb Lead-free 2SB1188 APPLICATIONS z Epitaxial planar type. z PNP silic

2SB1188 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package.  特征 / Features 饱和压降低,与 2SD1766 互�

2SB1188 Epitaxial Planar PNP Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Symbol Limits Unit Collector-Base Voltage Collector-Emitter Voltage Emitter

UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier

Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1188 TRANSISTOR (PNP) SOT-89 1. BASE FEATURES Power dissipation PCM: 0.5 Collector current -2 ICM: Collector-base voltage V(BR)C