2SB1184 डाटा शीट PDF( Datasheet )

Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864. Dimensions (Unit : mm) 2SB1184 6.5±0.2 5.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SB1184 TRANSISTOR (PNP) FEATURES z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complements the 2

2SB1184 Rev.E May.-2016 DATA SHEET 描述 / Descriptions TO-252 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-252 Plastic Package.  特征 / Features 饱和压降小,与 2SD1760 互�

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1184 DESCRIPTION ·Low VCE(sat) ·Small and slim package ·Complements the 2SD1760/2SD1864 ·100% tested ·Minimum Lot-to-Lot variations for robust d

SMD Type Power transistor 2SB1184 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). PNP silicon transistor. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0

2SB1184 PNP PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free Features: * Low VCE(sat). ). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) MAXIMUM RATINGS (TA=25ºC unless otherwise noted) Parameter Collector-Ba

Production specification Power Transistor FEATURES z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1760. 2SB1184 Pb Lead-free APPLICATIONS z z Epitaxial planar type. PNP silicon tr