2SB1119 डाटा शीट PDF( Datasheet )

Ordering number:1785A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1119/2SD1619 LF Amplifier, Electronic Governor Applications Features · Very small size making it easy to provide highdensity, small-sized

REPLACEMENT TYPE :2SB1119 FEATURES  Low Collector-Emitter Saturation Voltage VCE(sat)  Satisfactory Operation Performances at High Efficiency with the Low Voltage Power Supply. MAXIMUMRATINGS (TA = 25°

PNP Epitaxial Planar Silicon Transistors FEATURES  Very small size making it easy to provide High-density,small-size hybrid IC’s. Pb Lead-free Production specification 2SB1119 ORDERING INFORMATION Typ

Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1119 FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector c

SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Co

2SB1119/2SD1619 Elektronische Bauelemente RoHS Compliant Product D D1 A PNP Silicon Medium Power Transistor SOT-89 E1 FEATURES     b1 Power dissipation   P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector cu

2SB1 1 1 9 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES z Small Flat Package z LF Amplifier, Electronic Governor Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJ