डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB1116 | PNP SILICON TRANSISTORS DATA SHEET
SILICON TRANSISTORS
2SB1116, 1116A
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES • Low VCE(sat)
VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB |
NEC |
|
2SB1116 | PNP EPITAXIAL SILICON TRANSISTOR UTC 2SB1116/A
PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR
DESCRIPTION
* Complement to 2SD1616/A
APPLICATIONS
* Audio Frequency Power Amplifier * Medium Speed Switching
1
TO-92
1: Emit |
UTC |
|
2SB1116 | PNP General Purpose Transistor 2SB1116/2SB1116A PNP General Purpose Transistor
P b Lead(Pb)-Free
3 BASE COLLECTOR 2
1 2
1 EMITTER
3
TO-92
Maximum Ratings ( TA=25℃ C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitte |
Weitron |
|
2SB1116 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SB1116/1116A TRANSISTOR (PNP)
TO-92
FEATURES · High Collector Power Dissipation . · Complementary to 2SD1616/2SD161 |
JCST |
|
2SB1116 | PNP Plastic Encapsulated Transistor Elektronische Bauelemente
2SB1116
-1 A, -60 V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High Collector Power Dissipation Complemen |
SeCoS |
|
2SB1116A | PNP SILICON TRANSISTORS DATA SHEET
SILICON TRANSISTORS
2SB1116, 1116A
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES • Low VCE(sat)
VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB |
NEC |
|
2SB1116A | PNP EPITAXIAL SILICON TRANSISTOR UTC 2SB1116/A
PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR
DESCRIPTION
* Complement to 2SD1616/A
APPLICATIONS
* Audio Frequency Power Amplifier * Medium Speed Switching
1
TO-92
1: Emit |
UTC |
www.DataSheet.in | 2017 | संपर्क |