डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB1103 | PNP Transistor 2SB1103
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 4.0 kΩ (Typ) 200 Ω (Typ) 3
1
2 3
2SB1103
Absolute Maximu |
Hitachi Semiconductor |
|
2SB1103 | PNP Transistor isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, IC= -4A) ·Minimum Lot-to-Lot variation |
INCHANGE |
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2SB1103 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1103
DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Low collector saturation volta |
SavantIC |
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