| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
PNP Transistor |
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SavantIC |
SILICON POWER TRANSISTOR ter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collecto cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA ,IB=0 IE=-50mA ,I |
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INCHANGE |
PNP Transistor age IC= -25mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA VBE(sat)-1 Base-Emitter Saturation |
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