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2SB1102 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
2SB1102

Hitachi Semiconductor
PNP Transistor
Datasheet
2
2SB1102

SavantIC
SILICON POWER TRANSISTOR
ter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collecto cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA ,IB=0 IE=-50mA ,I
Datasheet
3
2SB1102

INCHANGE
PNP Transistor
age IC= -25mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA VBE(sat)-1 Base-Emitter Saturation
Datasheet



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