2SA940 डाटा शीट PDF( Datasheet )

20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA940 DESCRIPTION • Collector-Emitter Breakdown Voltage :V(BR)CEo

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 ·Minimum Lot-to-Lot variations

Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SA940 TRANSISTOR (PNP) TO-220 1. BASE 2. COLLECTOR FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 3. EMITTER Collector curren

2SA940 ® 2SA940 Pb Free Plating Product Pb PNP Silicon Epitaxial Power Transistor FEATURES z Complements the 2SC2073. 9.90±0.20 φ ± 60 3. 0. 20 4.50±0.20 1.30±0.20 15.70±0.20 13.08±0.20 COL

Features 3 2 1 — Wide safe Operating Area. — Complementary to 2SC2703 1. BASE 2. COLLECTOR 3. EMITTER 2SA940(PNP) TO-220 Transistor TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Dimensions in

Epitaxial Planar PNP Transistor FEATURES z Complements the 2SC2073. APPLICATIONS z Power Amplifier Applications. z Vertical Output Applications. Pb Lead-free Production specification 2SA940 TO-220AB MAXIMU

UNISONIC TECHNOLOGIES CO., LTD 2SA940 PNP SILICON TRANSISTOR PNP SILICON POWER TRANSISTORS  FEATURES * Collector-Emitter Voltage: VCEO=-150V (Min.) * DC Current Gain: hFE=40~140 @ IC=-500mA * Complementa