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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SA812 | PNP Transistor DATA SHEET
SILICON TRANSISTOR
2SA812A
PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0
mA) • High Volt |
NEC |
|
2SA812 | PNP Transistor PNP General Purpose Transistors
P b Lead(Pb)-Free
2SA812
1 2
3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous T |
WEITRON |
|
2SA812 | SOT-23 BIPOLAR TRANSISTORS RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
2SA812
FEATURES
* Power dissipation
PCM :
0.2 W(Tamb=25OC)
* Collector current
ICM :
-0.1 A
* Collector-base vol |
Rectron |
|
2SA812 | PNP Transistor Plastic-Encapsulate Transistors
FEATURES
Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V
2SA812(PNP)
MAXIMUM RATINGS (TA=25 Parameter Collector-Base Volta |
HOTTECH |
|
2SA812 | PNP Transistors SMD Type
Transistors
PNP Transistors 2SA812
Features
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 |
Kexin |
|
2SA812 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA812 TRANSISTOR (PNP)
FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z Hig |
JCET |
|
2SA812 | PNP Transistor DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SA812
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio frequency amplifier applications.
Pinning
1 = Base 2 = Emit |
DC COMPONENTS |
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