डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SA1941 | Silicon PNP Transistor TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1941
Power Amplifier Applications
2SA1941
Unit: mm
• High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198
• Recommended for 70- |
Toshiba Semiconductor |
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2SA1941 | PNP Epitaxial Silicon Transistor PNP Silicon PNP Epitaxial Transistor
R
2SA1941
VCEO=-140V (min) 2SC5198
70W
RoHS
APPLICATIONS
Power Amplifier Applications
FEATURES
High collector voltage VCEO=140V (min) Complementary to 2SC5198 Recommended |
JILIN SINO |
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2SA1941 | Silicon PNP transistor 2SA1941
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions TO-3P 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-3P Plastic Package.
特征 / Features
用于 70W 高保真音频功率输� |
BLUE ROCKET ELECTRONICS |
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2SA1941 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SA1941
DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5198 APPLICATIONS ·Power amplifier applica |
SavantIC |
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2SA1941 | POWER TRANSISTOR isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)=- 2.0V(Min) @IC=- 7A ·Good Linearity of hFE ·Complement to Type 2SC5198 ·Minimum Lot-to-Lot variations for robust |
Inchange Semiconductor |
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2SA1941B | Silicon PNP Transistor SEMICONDUCTOR
2SA1941B Series
Silicon PNP triple diffusion planar transistor -10A/-140V/100W
RoHS RoHS
Nell High Power Products
2.0
19.9±0.3
4.0
20.0 min
4.0 max
TO-3P(B) FEATURES
High breakdown volta |
NELL SEMICONDUCTOR |
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