| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo |
2SA1705 · Adoption of FBET process. · Fast switching speed. Package Dimensions unit:mm 2064 [2SA1705/2SC4485] ( ) : 2SA1705 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to- |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET process. · Fast switching speed. Package Dimensions unit:mm 2064 [2SA1705/2SC4485] ( ) : 2SA1705 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to- |
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ON Semiconductor |
Bipolar Transistor • Adoption of FBET process • Fast switching speed Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Colle |
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