2SA1357 डाटा शीट PDF( Datasheet )

www.DataSheet.co.kr 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • • • • hFE(1) = 100 to 320 (VCE

2SA1357 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-126F 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-126F Plastic Package.  特征 / Features 高 IC，低 VCE(sat)。 High

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC= -5.0A ·DC Current Gain- : hFE= 70(Min)@IC= -4A ·Low Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Minimum Lot-to-Lot variations

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1357 TRANSISTOR (PNP) TO – 126C FEATURES z High Collector Current z Strobe Flash Applications z Audio Power Amp