2SA1300 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications 2SA1300 Unit: mm · High DC current gain and excellent hFE linearity : hFE (1)

UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity

Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base volta

DC COMPONENTS CO., LTD. R 2SA1300 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use Strobe flash and medium power amplifier applications. Pinn

2SA1300 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -2 A, -20 V PNP Plastic Encapsulated Transistor FEATURES   TO-92 High DC Current gain and ex

2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On specia

2SA1300(3CG1300) 硅 PNP 半导体三极管/SILION PNP TRANSISTOR 用途:用于闪光驱动,中功率放大电路。 Purpose: Strobo flash, medium power amplifier applications. 特点:直流电流增益高，