2SA1201 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications 2SA1201 Unit: mm • High voltage: VCEO = −120 V • High transition frequency

Plastic-Encapsulate Transistors FEATURES z High voltage z High transition frequency z Small flatpackage z Complementary to 2SC2881 Pb Lead-free Production specification 2SA1201 ORDERING INFORMATION Type No

WILLAS SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ 2SA12T0H1RU FM1200-M+ Pb Free Product Features • Batch process design, exce

UNISONIC TECHNOLOGIES CO., LTD 2SA1201 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. „ FEATURES

2SA1 201 TRANSISTOR(PNP) FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector

2SA1201 PNP Silicon Elektronische Bauelemente RoHS Compliant Product Epitaxial Planar Transistor SOT-89 FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25�

SMD Type Voltage Amplifier Applications 2SA1201 Transistors Features High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz(typ.) Small Flat Package Complementary to 2SC2881 Absolute Maximum Rat