डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SA1179 | BIPOLAR TRANSISTORS RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
FEATURES
* High breakdown voltage
2SA1179
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant |
Rectron |
|
2SA1179 | PNP Transistor 2SA1179
SOT-23 Transistor(PNP)
1. BASE 2. EMITTER 3. COLLECTOR
SOT-23
Features
High breakdown voltage
MARKING: M
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collec |
LGE |
|
2SA1179 | Silicon Epitaxial Planar Transistor Production specification
Silicon Epitaxial Planar Transistor
FEATURES
High forward current transfer ratio hFE which has satisfactory linearity.
High speed switching. Complementary to 2SD1749.
Pb
|
GME |
|
2SA1179 | PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente
2SA1179
-0.15A , -55V PNP Silicon Plastic Encapsulated Transistor
FEATURES
High breakdown voltage
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
MARK |
SeCoS |
|
2SA1179 | PNP / NPN Epitaxial Planar Silicon Transistors Ordering number : EN3218B
2SA1179 / 2SC2812
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1179 / 2SC2812 Low-Frequency General-Purpose
Amplifier Applications
Features
• |
Sanyo Semicon Device |
|
2SA1179 | Transistor www.DataSheet4U.com
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23
2SA1179
TRANSISTOR (PNP)
Plastic-Encapsulate Transistors
SOT-23
FEATURES . High breakdown voltage MARKING: M
1. BASE 2. EMITTER |
ETC |
|
2SA1179 | TRANSISTOR www.DataSheet4U.com
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23
2SA1179
TRANSISTOR (PNP)
Plastic-Encapsulate Transistors
SOT-23
FEATURES . High breakdown voltage MARKING: M
1. BASE 2. EMITTER |
Jiangsu Changjiang Electronics |
www.DataSheet.in | 2017 | संपर्क |