2SA102 डाटा शीट PDF( Datasheet )

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • H

UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES

2SA1020 One Watt High Current PNP Transistor Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltag

2SA1020 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -2A, -50V PNP Plastic Encapsulated Transistor FEATURES  Power amplifier applications N G TO-92MO

2SA1020 PNP 2 1 3 2 3 1 1. EMITTER 2. COLLECTOR 3. BASE TO-92MOD V CEO Value -50 -50 -5 -2,0 1 900 7.25 138 2SA1020=A1020 -10 -50 -0.1 -0.1 u u -40 -5.0 1 WEITRON http://www.weitron.com.tw Free D

2SA1020I Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-251 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-251 Plastic Package.  特征 / Features 饱和压降低,开关时间�